********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*May 26, 2014
*ECN S14-1093, Rev. A
*File Name: SiA922EDJ_PS.txt and SiA922EDJ_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiA922EDJ D G S 
x1  D G S SiA922EDJ_mos
x2  G S   SiA922EDJ_esd
.ENDS  SiA922EDJ
.SUBCKT SiA922EDJ_mos D G S 
M1 3 GX S S NMOS W= 434656u L= 0.25u 
M2 S GX S D PMOS W= 434656u L= 0.34u
R1 D 3 4.106e-02 TC=5.176e-03, 3.379e-06 
CGS GX S 2.245e-10 
CGD GX D 1.379e-11 
RG G GY 3.3 
RTCV 100 S 1e6 TC=3.191e-04, -5.891e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 434656u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 0 KP = 2.231e-05 NSUB = 1.058e+17 
+ KAPPA = 8.200e-05 NFS = 5.498e+11 
+ LD = 0 IS = 0 TPG = 1 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 1.361e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.222e-08 T_MEASURED = 25 BV = 31 
+RS = 1.313e-02 N = 1.551e+00 IS = 8.604e-08 
+EG = 1.043e+00 XTI = 3.255e-01 TRS1 = 1.778e-03 
+CJO = 2.231e-10 VJ = 3.394e-01 M = 4.420e-01 ) 
.ENDS SiA922EDJ_mos
.subckt SiA922EDJ_esd 1 2 
r1 1 9 2.518e+05 TC= -5.594e-03 
d1 9 2 dleak 
.MODEL dleak d (IS = 3.000e-10 XTI = 4.769e+02 EG = 1.17 
+ T_MEASURED = 25 TBV1 = 0 N = 3.724e+01 BV = 50) 
r2 1 10 4.743e+00 TC= 5.166e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 4.518e-12 XTI = 4.924e+01 EG = 1.17 
+ T_MEASURED = 25 TBV1 = -5.012e-03 N = 3.437e+00 BV = 1.124e+01 ) 
.ends SiA922EDJ_esd
